Semiconductor device

A semiconductor device, comprising:

• a substrate including an active region;
• a gate electrode fully buried in the substrate;
• a bit line structure on the substrate;
• a bit line contact arranged between the substrate and the bit line structure and electrically connected to the active region of the substrate;
• a storage contact arranged adjacent to the bit line structure and electrically connected to the active region of the substrate;
• a landing pad on the storage contact;
• and
• a capacitor structure on the landing pad,
• wherein:
• the bit line structure includes:
• a first conductive pattern on the active region of the substrate,
• a second conductive pattern on the first conductive pattern, and
• a capping pattern on the second conductive pattern,
• the first conductive pattern of the bit line structure includes titanium nitride (TiN),
• the second conductive pattern of the bit line structure includes molybdenum (Mo), and
• the capping pattern of the bit line structure includes silicon nitride, silicon oxynitride, or silicon oxide.

A semiconductor device, comprising:

• a substrate including an active region;
• a gate electrode fully buried in the substrate;
• a bit line structure on the substrate;
• a bit line contact arranged between the substrate and the bit line structure and electrically connected to the active region of the substrate;
• a storage contact arranged adjacent to the bit line structure and electrically connected to the active region of the substrate;
• a landing pad on the storage contact;
• and
• a capacitor structure on the landing pad,
• wherein:
• the bit line structure includes:
• a first conductive pattern on the active region of the substrate,
• a second conductive pattern on the first conductive pattern, and
• a capping pattern on the second conductive pattern,
• the first conductive pattern of the bit line structure includes tantalum (Ta), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), titanium (Ti), titanium nitride (TiN), titanium silicon nitride (TiSiN), tungsten (W), tungsten nitride (WN), tungsten silicon nitride (WSiN), or graphene, and
• the second conductive pattern of the bit line structure includes molybdenum (Mo).