Semiconductor device and method for forming the same

A method for forming a semiconductor device, comprising:

• providing a substrate;
• forming a plurality of bit lines on the substrate;
• forming a plurality of contacts on the substrate, and the bit lines and the contacts are arranged alternatively with each other;
• forming a plurality of storage node pads on the contacts and the bit lines;
• forming a capacitor structure on the storage node pads, wherein forming the capacitor structure comprise:
• forming a support layer structure on the substrate, and the support layer structure comprises at least one oxide layer and at least one nitride layer alternatively stacked;
• forming a plurality of openings in the support layer structure, each of the openings exposes one of the storage node pads;
• forming a plurality of bottom electrode layers in the openings;
• and
• removing the at least one oxide layer in the support layer structure;
• and
• performing a first surface treatment on the storage node pads to form the first interface layers, between the storage node pads and the capacitor structure, and the first interface layers comprise a material consisted of metal nitride.