Image sensor having pixels with isolated floating diffusions

An image sensor pixel, comprising:

• a semiconductor substrate;
• a floating diffusion region that includes a first doped region of a first dopant type and doped pinning region of an opposite dopant type formed at least partially within said first doped region, wherein a portion of the doped pinning region extends laterally outside of the floating diffusion region into a portion of the substrate having the same doping type as the doped pinning region;
• and
• a gate configured to selectively cause charge transfer with respect to the floating diffusion.

An image sensor pixel formed in a semiconductor substrate, the image sensor pixel comprising:

• a photoconversion device that generates photocharge in response to at least one incident photon;
• a charge storage region to which photocharge of a first conductivity type generated in said photoconversion device is selectively transferred, wherein the charge storage region is doped with a first dopant type providing conductivity corresponding to the first conductivity type;
• a transistor gate configured to selectively cause photocharge transfer with respect to the charge storage region;
• and
• a doped pinning region disposed between the charge storage region and the transistor gate, wherein the doped pinning region has a second dopant type opposite to the first dopant type of the charge storage region, and is conductively coupled to a pinning potential, and wherein a portion of the doped pinning region extends laterally outside of the charge storage region into a portion of the substrate having the same doping type as the doped pinning region.