Light emitting diode

A light emitting diode, comprising:

• a first conductivity type semiconductor layer;
• a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer;
• and
• a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa,
• the lower insulation layer having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer,
• a transparent conductive oxide layer disposed on the mesa and electrically connected to the second conductivity type semiconductor layer;
• a dielectric layer covering the conductive oxide layer and having a plurality of openings exposing the conductive oxide layer;
• and
• a metal reflection layer disposed on the dielectric layer and connected to the conductive oxide layer through the openings of the dielectric layer,
• wherein the lower insulation layer is disposed on the metal reflection layer, and the first opening exposes the first conductivity type semiconductor layer, and the second opening exposes the metal reflection layer, and wherein:
• the lower insulation layer includes a distributed Bragg reflector and a capping layer disposed on the distributed Bragg reflector, and
• the capping layer includes a mixed layer of at least two kinds of oxides including SiO2.

A light emitting diode, comprising:

• a first conductivity type semiconductor layer;
• a mesa disposed on the first conductivity type semiconductor layer, the mesa including an active layer and a second conductivity type semiconductor layer;
• a lower insulation layer including a distributed Bragg reflector covering a side surface of the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa;
• and
• a protection layer covering the distributed Bragg reflector on the first conductivity type semiconductor layer;
• a transparent conductive oxide layer disposed on the mesa and electrically connected to the second conductivity type semiconductor layer;
• a dielectric layer covering the conductive oxide layer and having a plurality of openings exposing the conductive oxide layer;
• and
• a metal reflection layer disposed on the dielectric layer and connected to the conductive oxide layer through the openings of the dielectric layer,
• wherein the lower insulation layer is disposed on the metal reflection layer, and
• wherein the protection layer includes a mixed layer of at least two kinds of oxides including SiO2 and the mixed layer including a SiO2—TiO2 mixed layer.