Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

An optoelectronic semiconductor chip comprising:

• a semiconductor layer sequence with an active zone for generating a radiation;
• a metal mirror for the radiation;
• a protective metallization directly on a side of the metal mirror facing away from the semiconductor layer sequence;
• an adhesion promoting layer directly on a side of the metal mirror facing the semiconductor layer sequence;
• and
• a contact layer of a transparent conductive oxide;
• wherein:
• the adhesion promoting layer is an encapsulation layer for the metal mirror so that the metal mirror is completely encapsulated an outer edge by the adhesion promoting layer together with the protective metallization;
• and
• the contact layer directly adjoins the semiconductor layer sequence and is electrically ohmically connected to the metal mirror.

An optoelectronic semiconductor chip comprising:

• a semiconductor layer sequence with an active zone for generating a radiation;
• a metal mirror for the radiation;
• a protective metallization directly on a side of the metal mirror facing away from the semiconductor layer sequence;
• an adhesion promoting layer directly on a side of the metal mirror facing the semiconductor layer sequence;
• and
• a cover layer;
• and wherein:
• the adhesion promoting layer is an encapsulation layer for the metal mirror so that the metal mirror is completely encapsulated by the adhesion promoting layer together with the protective metallization;
• and
• wherein the cover layer extends from a light extraction side over side flanks of the semiconductor layer sequence up to the adhesion promoting layer, so that the semiconductor layer sequence is enclosed by the cover layer together with the adhesion promoting layer and the protective metallization in at least one cross-sectional view and wherein the cover layer and the adhesion promoting layer are made of the same material.