Time of flight sensor device and time of flight sensor arrangement

A time of flight sensor device, comprising:

• a semiconductor substrate comprising a conversion region to convert an electromagnetic signal into photo-generated charge carriers and a substrate doping region having a n-doping type, the substrate doping region extending from a first main surface region of the semiconductor substrate into the semiconductor substrate, the semiconductor substrate having a p-doped region adjacent to the substrate doping region, the substrate doping region at least partially forming the conversion region in the semiconductor substrate;
• a readout node arranged in the semiconductor substrate within the substrate doping region and having the n doping type, the readout node being configured to readout the photo-generated charge carriers;
• a sensor electrode separated from the semiconductor substrate by an isolating material, the sensor electrode being configured to modify an electric potential distribution in the substrate doping region;
• a control electrode arranged in or on the substrate doping region of the semiconductor substrate, the control electrode being configured to demodulate electrons of the photo-generated charge carriers;
• and
• a buried doping layer in the semiconductor substrate having a higher concentration of a p-doping type than the p-doped region of the semiconductor substrate adjacent to the substrate doping region,
• wherein the buried doping layer is formed in the semiconductor substrate and vertically below the substrate doping region in the semiconductor substrate,
• wherein the substrate doping region laterally extends uninterrupted beyond the conversion region in the semiconductor substrate.