Transistor with single termination trench having depth more than 10 microns

A method of fabricating a transistor, comprising:

• depositing a first epitaxial layer;
• depositing a second epitaxial layer on the first epitaxial layer;
• ion implanting the second epitaxial layer to form a base layer along a top surface of the second epitaxial layer and implanting a source into the base layer, wherein the base layer is a base of the transistor;
• forming a single termination trench in the second epitaxial layer by etching the second epitaxial layer through the base layer so that the base layer is on either side of the trench, wherein a depth of the termination trench is greater than 10 microns;
• driving the source implanting by heating the source;
• filling the termination trench with a dielectric material,
• wherein the base layer on either side of the trench is in direct contact with the dielectric material;
• and
• depositing a contact glass on the dielectric material.