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US 12,015,078 B2Granted
Manufacturing method of semiconductor power device
AssigneeSuzhou Oriental Semiconductor Co., Ltd.
InventorsWei Liu, Zhenyi Xu, Zhendong Mao, Xin Wang
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Abstract
A manufacturing method of a semiconductor power device includes the following steps: An n-type substrate is etched in a self-aligning manner using a first insulating layer, a second insulating layer, and a third insulating layer as a mask to form a second groove in the n-type substrate. A fourth insulating layer and a gate are formed in the second groove.
Claims9
A manufacturing method of a semiconductor power device, comprising:
- forming a first insulating layer on an n-type substrate and etching the first insulating layer to form an opening;
- forming an insulating sidewall in the opening;
- etching the n-type substrate using the first insulating layer and the insulating sidewall as a mask to form a first groove in the n-type substrate;
- forming a second insulating layer and a shield gate in the first groove;
- forming a third insulating layer on a surface of the shield gate;
- etching off the insulating sidewall;
- and etching the n-type substrate using the first insulating layer, the second insulating layer, and the third insulating layer as a mask to form a second groove in the n-type substrate.
4 more elements
Dependencies are inferred from the claim text.