Thin film structure including dielectric material layer and electronic device including the same

A memory device comprising:

• a dielectric material layer;
• and
• first and second metal layers on both sides of the dielectric material layer,
• wherein the dielectric material layer comprising a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 through substitution and doping, where x>=0, y>0, and a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B,
• wherein a dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration, and
• wherein A is Sr, B is Ti,
• A′ is any one selected from Ba, Cs, Rb, and K, and
• B′ is any one selected from Zr and Hf,
• wherein the compound expressed by ABO3 is SrTiO3, and Ti is substituted and doped with any one of Zr and Hf.

A memory device comprising:

• a dielectric material layer;
• and
• first and second metal layers on both sides of the dielectric material layer,
• wherein the dielectric material layer comprising a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 through substitution and doping, where x>=0, y>=0, at least one of x and y≠0 and a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B,
• wherein a dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration, and
• wherein A is K and B is Ta,
• A′ is any one selected from Cs, Rb, Ba, and La, and
• B′ is any one selected from In, Sc, Y, Hf, Sn, and Zr.