Semiconductor device including cation species, manufacturing method thereof, and electronic equipment
AssigneeSony Semiconductor Solutions Corporation
InventorKazuyuki Tomida
Life of this patent
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Abstract
There is provided a semiconductor device including a channel portion, and a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion, in which the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion.
Claims20
A semiconductor device, comprising:
- a channel portion;
- and
- a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion,
- wherein the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion, and
- wherein the first portion does not include the cation species.
A manufacturing method of a semiconductor device, comprising:
- forming a channel portion;
- and
- forming a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion,
- wherein the gate insulating film is formed so as to include a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion, and
- wherein the first portion does not include the cation species.
Electronic equipment comprising:
- a channel portion;
- and
- a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion,
- wherein the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion, and
- wherein the first portion does not include the cation species.
Dependencies are inferred from the claim text.