Semiconductor devices having supporter structures

A semiconductor device comprising:

• a substrate including a cell area and a peripheral circuit area;
• lower electrodes on the substrate in the cell area;
• a first supporter structure including first supporter patterns interconnecting the lower electrodes, wherein side surfaces of the first supporter patterns and side surfaces of the lower electrodes that are exposed by the first supporter patterns at least partially define a first open region, and dam structures at an edge of the cell area, the first open region extending among the first supporter patterns in a horizontal direction, the dam structures spaced apart from one another;
• a dielectric layer covering the first supporter structure and the lower electrodes;
• and
• an upper electrode on the dielectric layer,
• wherein a distance between adjacent ones of the first supporter patterns is smaller than or equal to a pitch of the lower electrodes.

A semiconductor device, comprising:

• lower electrodes on landing pads, the lower electrodes defining a honeycomb structure;
• a first supporter structure including first supporter patterns interconnecting the lower electrodes and wherein side surfaces of the first supporter patterns and side surfaces of the lower electrodes that are exposed by the first supporter patterns at least partially define a first open region, the first supporter patterns being spaced apart from one another, the first open region extending among the first supporter patterns in a horizontal direction;
• a second supporter structure including a supporter plate interconnecting the lower electrodes and the supporter plate having inner walls that at least partially define separate, respective open holes inside the supporter plate, the second supporter structure being on the first supporter structure, an upper surface of the second supporter structure being at a same level as upper surfaces of the lower electrodes;
• a dielectric layer covering the second supporter structure and the lower electrodes;
• and
• an upper electrode on the dielectric layer,
• wherein a distance between adjacent ones of the first supporter patterns is smaller than or equal to a pitch of the lower electrodes,
• wherein a thickness of the second supporter structure is greater than a thickness of the first supporter structure, and
• wherein the open holes are spaced apart from one another, and the supporter plate extends among the open holes in the horizontal direction.