Semiconductor device

A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface, wherein

• the semiconductor substrate includes a hydrogen containing region including hydrogen,
• a hydrogen chemical concentration distribution in a depth direction of the hydrogen containing region includes:
• a first hydrogen chemical concentration peak;
• a second hydrogen chemical concentration peak that is closest to the first hydrogen chemical concentration peak, among hydrogen chemical concentration peaks arranged closer to the upper surface than the first hydrogen chemical concentration peak;
• a third hydrogen chemical concentration peak arranged closer to the upper surface than the second hydrogen chemical concentration peak;
• a first inter peak region arranged between the first hydrogen chemical concentration peak and the second hydrogen chemical concentration peak;
• and
• a second inter peak region arranged between the second hydrogen chemical concentration peak and the third hydrogen chemical concentration peak;
• and
• a carrier concentration distribution in the depth direction of the hydrogen containing region includes an inter-peaks concentration peak arranged in the second inter peak region;
• and
• a local minimum value of a carrier concentration in the first inter peak region is smaller than a local minimum value of a carrier concentration in the second inter peak region.

A semiconductor device comprising a semiconductor substrate including a first main surface and a second main surface and containing a drift region of a first conductivity type, comprising:

• a buffer region of the first conductivity type adjacent to the drift region at a side of the second main surface;
• wherein
• a carrier concentration distribution in a depth direction of the buffer region has a plurality of first peaks, a carrier concentration of each of the first peaks is higher than a carrier concentration of the drift region,
• a hydrogen chemical concentration distribution in the depth direction of the buffer region has a plurality of hydrogen peaks, and
• at least one of the first peaks of the carrier concentration distribution in the buffer region is a second peak arranged at a depth position between two adjacent ones of the plurality of hydrogen peaks of the hydrogen chemical concentration distribution in the depth direction.