Carbon, nitrogen and/or fluorine co-implants for low resistance transistors

A semiconductor device including a drain extended metal oxide semiconductor field effect transistor (MOSFET), comprising:

• a source region and a drain region each having a first conductivity type spaced apart along a surface of a semiconductor material having the first conductivity type and a top surface;
• a gate electrode over the top surface of the semiconductor material between the source region and the drain region;
• a body region having an opposite second conductivity type extending from the source region toward the drain region under the gate electrode;
• a drift region having the first conductivity type extending from the body region toward the drain region;
• and
• a diffusion suppression implant region overlapping the body region, the diffusion suppression implant region comprising at least one of carbon, nitrogen, and fluorine, the drain region and the drift region being free of carbon, nitrogen and fluorine.