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US 12,015,053 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsMakoto Koshimizu, Yasutaka Nakashiba
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a gate dielectric film formed on the semiconductor substrate, a gate electrode formed on the gate dielectric film, a field plate portion which is integrally formed with the gate electrode, a step insulating film in contact with the field plate portion, a high dielectric constant film in contact with the step insulating film and having a higher dielectric constant than silicon.
Claims10
A semiconductor device comprising:
- a semiconductor substrate;
- a gate dielectric film formed on the semiconductor substrate;
- a gate electrode formed over the gate dielectric film;
- a field plate portion integrally formed with the gate electrode;
- a step dielectric film in contact with the field plate portion;
- and
- a high dielectric constant film having a higher dielectric constant than silicon, the high dielectric constant film being in contact with the step dielectric film,
- wherein the high dielectric constant film includes:
- a first portion sandwiched between the gate dielectric film and the gate electrode;
- and
- a second portion sandwiched between the step dielectric film and the gate dielectric film.
8 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a gate dielectric film formed on the semiconductor substrate;
- a gate electrode formed over the gate dielectric film;
- a field plate portion integrally formed with the gate electrode;
- a step dielectric film in contact with the field plate portion;
- and
- a potential control film in contact with the step dielectric film, the potential control film forming a potential barrier on a surface of the semiconductor substrate located under the step dielectric film.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a gate dielectric film formed on the semiconductor substrate;
- a gate electrode formed over the gate dielectric film;
- a field plate portion integrally formed with the gate electrode;
- a step dielectric film in contact with the field plate portion;
- and
- a high dielectric constant film having a higher dielectric constant than silicon, the high dielectric constant film being in contact with the step dielectric film,
- wherein the high dielectric constant film has a function of forming a potential barrier on a surface of the semiconductor substrate by shifting a Fermi level on the surface of the semiconductor substrate located under the step dielectric film.
5 more elements
Dependencies are inferred from the claim text.