Ring structure for film resistor

A method for forming a semiconductor structure, comprising:

• depositing a lower dielectric layer over a substrate;
• depositing a resistor layer over the lower dielectric layer;
• and
• forming an isolation structure over the lower dielectric layer, wherein the isolation structure extends through the resistor layer and envelopes a perimeter of a resistor segment of the resistor layer, wherein forming the isolation structure comprises:
• patterning the resistor layer to define an opening that surrounds the resistor segment;
• depositing a dielectric liner over the resistor layer, wherein the dielectric liner lines the opening;
• and
• forming a conductive body within the opening, wherein the dielectric liner separates the conductive body from the resistor layer.

A method of forming an integrated chip, comprising:

• depositing a resistive layer over a substrate, wherein the resistive layer comprises a first material;
• forming a conductive structure over the resistive layer, wherein the conductive structure comprises a second material different than the first material;
• forming an inter-level dielectric (ILD) structure over the conductive structure;
• patterning the ILD structure and the resistive layer to define a plurality of via openings and a ring structure opening, such that the ring structure opening laterally encloses a resistor segment of the resistive layer, wherein the ring structure opening extends from an upper surface of the ILD structure to a point below the resistive layer;
• forming a plurality of conductive vias in the plurality of via openings;
• and
• forming a ring structure within the ring structure opening.