Solid-state imaging unit and electronic apparatus

A solid-state imaging unit, comprising:

• a light receiving surface;
• and
• two or more pixels disposed to oppose the light receiving surface, wherein the two or more pixels each include:
• a photoelectric conversion section that performs photoelectric conversion on light having entered via the light receiving surface;
• a charge holding section that holds a charge transferred from the photoelectric conversion section;
• a transfer transistor that includes a vertical gate electrode reaching the photoelectric conversion section, the transfer transistor transferring the charge from the photoelectric conversion section to the charge holding section;
• and
• two or more light-blocking sections disposed in layers that are provided between the light receiving surface and the charge holding section and are different from each other,
• wherein the two or more light-blocking sections are provided at positions at which the two or more light-blocking sections do not block entry, into the photoelectric conversion section, of the light having entered via the light receiving surface and at which the two or more light-blocking sections do not provide a gap when viewed from the light receiving surface;
• and
• a separator that is joined to a first of the two or more light-blocking sections and to a second of the two or more light-blocking sections, the separator electrically and optically separating the two or more pixels.

An electronic apparatus, comprising:

• a solid-state imaging unit that outputs a pixel signal based on entering light;
• and
• a signal processing circuit that processes the pixel signal,
• the solid-state imaging unit including:
• a light receiving surface, and
• two or more pixels disposed to oppose the light receiving surface, wherein the two or more pixels each include:
• a photoelectric conversion section that performs photoelectric conversion on light having entered via the light receiving surfaces;
• a charge holding section that holds a charge transferred from the photoelectric conversion sections;
• a transfer transistor that includes a vertical gate electrode reaching the photoelectric conversion section, the transfer transistor transferring the charge from the photoelectric conversion section to the charge holding sections;
• and
• two or more light-blocking sections disposed in layers that are provided between the light receiving surface and the charge holding section and are different from each other,
• wherein the two or more light-blocking sections are provided at positions at which the two or more light-blocking sections do not block entry, into the photoelectric conversion section, of the light having entered via the light receiving surface and at which the two or more light-blocking sections do not provide a gap when viewed from the light receiving surface, and
• wherein the two or more light-blocking sections include:
• a first light-blocking section disposed in a layer between the photoelectric conversion section and the charge holding section, the first light-blocking section having an opening which the vertical gate electrode runs through, the first light-blocking section blocking, at a part other than the opening, entry, into the charge holding section, of the light having entered via the light receiving surface, and
• a second light-blocking section disposed at a position that is in a layer between the light receiving surface and the first light-blocking section and opposes at least the opening, the second light-blocking section blocking the entry, into the charge holding section, of the light having entered via the light receiving surface.