High temporal resolution solid-state X-ray detection system

A device chip for solid-state X-ray detection, comprising:

• a series of boron-doped drift cathode strips mirrored on a front and a back of the device chip;
• a column of phosphorus-doped readout anodes on the front of the device chip;
• and
• a boron-doped counter cathode on the back of the device chip,
• wherein values for a thickness of the device chip, a number of the series of boron-doped drift cathode strips mirrored on the front and the back of the device chip, and a bias voltage applied to the series of boron-doped drift cathode strips are selected to obtain a predetermined temporal resolution for X-ray pulses within a particular range of energies, wherein a value for the thickness of the device chip is selected from a range spanning 0.01 μm to 1000 μm, wherein a value of the number of the series of boron-doped drift cathode strips is selected from a range spanning 1 to 50, wherein a value for the bias voltage is selected from a range spanning 0V to 12V, and wherein the particular range of energies spans 1 keV to 1000 keV.

A method for solid-state X-ray detection with a high temporal resolution, comprising:

• receiving an X-ray pulse in a semiconductor chip comprising a bulk material resulting in an electron cloud being formed in the semiconductor chip;
• applying a first set of voltages across a first plurality of drift cathode strips on a first side of the semiconductor chip and a second plurality of drift cathode strips on a second side of the semiconductor chip, wherein each of the first plurality and the second plurality of drift cathode strips are doped with a p-type dopant, and wherein setting the first set of voltages causes the electron cloud to migrate to a middle section of the semiconductor chip;
• applying a second set of voltages to across the first and the second plurality of drift cathode strips to form an electric field having a linear profile to cause the electron cloud to drift along the middle of the semiconductor chip;
• and
• activating a counter cathode on the second side and one or more readout anodes on the first side to collect the electron cloud after spreading in the middle section of the semiconductor chip, wherein each of the one or more readout anodes is doped with an n-type dopant,
• wherein values for a thickness of the semiconductor chip, a number of the first plurality and the second plurality of drift cathode strips, and a bias voltage applied to the first and the second plurality of drift cathode strips are selected to obtain a predetermined temporal resolution for X-ray pulses within a particular range of energies, wherein a value for the thickness of the semiconductor chip is selected from a range spanning 0.01 μm to 1000 μm, wherein a value of the number of the first plurality and the second plurality of drift cathode strips is selected from a range spanning 1 to 50, wherein a value for the bias voltage is selected from a range spanning 0V to 12V, and wherein the particular range of energies spans 1 keV to 1000 keV.