Back to results
US 12,015,010 B2Granted
Vertically stacked semiconductor device including a hybrid bond contact junction circuit and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJen-Yuan Chang, Chia-Ping Lai
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first semiconductor die, a second semiconductor die including a side surface bonded to the first semiconductor die, such that the second semiconductor die is perpendicular to the first semiconductor die, and a junction circuit for connecting the first semiconductor die to the second semiconductor die.
Claims20
A semiconductor device comprising:
- a first semiconductor die including a first contact;
- a second semiconductor die including a side surface bonded to the first semiconductor die such that the second semiconductor die is perpendicular to the first semiconductor die, wherein the side surface comprises:
- a dielectric layer comprising at least one of interlayer dielectric or intermetal dielectric;
- and
- a second contact in the dielectric layer;
- and
- a junction circuit contacting the first contact and the second contact and configured to connect the first semiconductor die to the second semiconductor die.
4 more elements
A junction circuit comprising:
- a bonding trench comprising a first surface and a second surface opposite the first surface, and a first end and a second end opposite the first end;
- a bonding pad formed on the first surface of the bonding trench and at the first end of the bonding trench, wherein the bonding pad is configured to electrically couple the junction circuit with a first die;
- and
- a bonding via formed on the second surface of the bonding trench and at the second end of the bonding trench, wherein the bonding via is configured to electrically couple the junction circuit with a second die.
1 more element
A method of making a semiconductor device, comprising:
- forming a first semiconductor die including a first contact;
- forming a second semiconductor die and forming a bonding layer on a side surface of the second semiconductor die, wherein the side surface includes:
- a dielectric layer comprising at least one of interlayer dielectric or intermetal dielectric;
- and
- a second contact in the dielectric layer;
- forming a junction circuit in the bonding layer;
- and
- bonding the bonding layer to the first semiconductor die such that the second semiconductor die is perpendicular to the first semiconductor die, and the junction circuit contacts the second contact in the dielectric layer of the side surface and connects the first semiconductor die to the second semiconductor die.
5 more elements
Dependencies are inferred from the claim text.