Wafer bonding method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Chi Lin, Tsang-Jiuh Wu, Wen-Chih Chiou, Chen-Hua Yu
Life of this patent
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Abstract
In an embodiment, a device includes: a first wafer including a first substrate and a first interconnect structure, a sidewall of the first interconnect structure forming an obtuse angle with a sidewall of the first substrate; and a second wafer bonded to the first wafer, the second wafer including a second substrate and a second interconnect structure, the sidewall of the first substrate being laterally offset from a sidewall of the second substrate and a sidewall of the second interconnect structure.
Claims20
A method comprising:
- obtaining a first wafer comprising a first semiconductor substrate, a first dielectric layer, and first die connectors;
- removing a first portion of the first dielectric layer in an edge region of the first wafer with a first trim process, the first trim process removing the first dielectric layer at a faster rate than the first semiconductor substrate;
- removing a second portion of the first semiconductor substrate in the edge region of the first wafer with a second trim process, the second trim process removing the first semiconductor substrate at a faster rate than the first dielectric layer;
- and
- bonding a second wafer to the first wafer, the second wafer comprising a second semiconductor substrate, a second dielectric layer, and second die connectors, the second dielectric layer bonded to the first dielectric layer with dielectric-to-dielectric bonds, the second die connectors bonded to the first die connectors with metal-to-metal bonds.
A method comprising:
- obtaining a first wafer comprising a semiconductor substrate and a dielectric layer;
- removing edge regions of the dielectric layer with an etching process while a mask covers center regions of the dielectric layer, the etching process removing the edge regions of the dielectric layer along a first direction;
- removing edge regions of the semiconductor substrate with a sawing process, the sawing process removing the edge regions of the semiconductor substrate along a second direction, second direction different from the first direction;
- and
- bonding a second wafer to the first wafer.
A structure comprising:
- a first wafer comprising a first semiconductor substrate, a first dielectric layer, and first die connectors, a sidewall of the first dielectric layer forming an obtuse angle with a sidewall of the first semiconductor substrate;
- and
- a second wafer comprising a second semiconductor substrate, a second dielectric layer, and second die connectors, the second dielectric layer bonded to the first dielectric layer with dielectric-to-dielectric bonds, the second die connectors bonded to the first die connectors with metal-to-metal bonds, a sidewall of the second dielectric layer being laterally offset from the sidewall of the first dielectric layer.
Dependencies are inferred from the claim text.