Hybrid device assemblies and method of fabrication

A device assembly comprising:

• a functional semiconductor substrate having a first surface and a second surface opposing the first surface, the functional semiconductor substrate having at least a first electronic component integrally formed therein from a volume of semiconductor material that is a portion of the functional semiconductor substrate;
• an opening in the first surface of the functional semiconductor substrate that defines a cavity that extends toward the second surface functional semiconductor substrate;
• a semiconductor die disposed within the cavity;
• and
• a build-up structure formed across the first surface of the functional semiconductor substrate or the second surface of the functional semiconductor substrate, the build-up structure including at least one layer of electrically insulating material surrounding an electrically conductive contact coupled to a surface of the semiconductor die.

A device assembly comprising:

• a functional semiconductor substrate having a first surface and a second surface opposing the first surface, the functional semiconductor substrate having at least a first electronic component integrally formed therein from a volume of semiconductor material that is a portion of the functional semiconductor substrate;
• an opening in the first surface of the functional semiconductor substrate that defines a cavity that extends toward the second surface functional semiconductor substrate;
• and
• a semiconductor die placed within the cavity;
• wherein the semiconductor die comprises a compound semiconductor transistor device;
• and
• wherein the first electronic component is coupled to the compound semiconductor transistor device.

A method comprising:

• receiving a functional semiconductor substrate having a first surface and a second surface opposing the first surface, the functional semiconductor substrate having at least a first electronic component integrally formed therein from a volume of semiconductor material that is a portion of the functional semiconductor substrate;
• forming an opening in the first surface of the functional semiconductor substrate that defines a cavity that extends toward the second surface functional semiconductor substrate;
• and
• disposing a semiconductor die within the cavity.