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US 12,015,000 B2Granted
Semiconductor product with interlocking metal-to-metal bonds and method for manufacturing thereof
AssigneeAmkor Technology Singapore Holding Pte. Ltd.
InventorsBora Baloglu, Curtis Zwenger, Ron Huemoeller
Life of this patent
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Abstract
A structure and method for performing metal-to-metal bonding in an electrical device. For example and without limitation, various aspects of this disclosure provide a structure and method that utilize an interlocking structure configured to enhance metal-to-metal bonding.
Claims20
A method of manufacturing an electronic device, the method comprising:
- providing an upper assembly comprising:
- an upper substrate;
- and
- an upper metal contact structure (UMCS) that comprises a metal, the upper metal contact structure (UMCS) comprising an upper UMCS side coupled to the upper substrate, and a lower UMCS side;
- providing a lower assembly comprising:
- a lower substrate;
- and
- a lower metal contact structure (LMCS) comprising the metal, the lower metal contact structure (LMCS) comprising a lower LMCS side coupled to the lower substrate, and an upper LMCS side;
- and
- forming a metal-to-metal solderless bond only between the lower UMCS side and the upper LMCS side, said forming comprising:
- positioning the upper assembly directly on and in contact with the lower assembly, such that there is a vertical gap between the lower UMCS side and the upper LMCS side;
- and
- after said positioning, reducing or eliminating the vertical gap by, at least in part, applying heat to the upper and lower assemblies.
10 more elements
A method of manufacturing an electronic device, the method comprising:
- providing an upper assembly comprising:
- an upper substrate;
- an upper metal contact structure (UMCS) that comprises a metal, the upper metal contact structure (UMCS) comprising an upper UMCS side coupled to the upper substrate, and a lower UMCS side;
- and
- a UMCS dielectric layer that forms a portion of a lower side of the upper assembly, wherein the UMCS dielectric layer comprises an oxide or a nitride;
- providing a lower assembly comprising:
- a lower substrate;
- a lower metal contact structure (LMCS) comprising the metal, the lower metal contact structure (LMCS) comprising a lower LMCS side coupled to the lower substrate, and an upper LMCS side;
- and
- an LMCS dielectric layer that forms a portion of an upper side of the lower assembly, wherein the LMCS dielectric layer comprises an oxide or a nitride;
- and
- forming a metal-to-metal solderless bond between the lower UMCS side and the upper LMCS side, said forming comprising:
- positioning the upper assembly directly on the lower assembly;
- and
- after said positioning, applying at least a heat to the upper and lower assemblies.
12 more elements
An electronic device comprising:
- an upper assembly comprising:
- an upper substrate;
- an upper metal contact structure (UMCS) that comprises a metal, the upper metal contact structure (UMCS) comprising an upper UMCS side coupled to the upper substrate, and a lower UMCS side;
- and
- a UMCS dielectric layer that forms a portion of a lower side of the upper assembly, wherein the UMCS dielectric layer comprises an oxide or a nitride;
- a lower assembly comprising:
- a lower substrate;
- a lower metal contact structure (LMCS) comprising the metal, the lower metal contact structure (LMCS) comprising a lower LMCS side coupled to the lower substrate, and an upper LMCS side;
- and
- an LMCS dielectric layer that forms a portion of an upper side of the lower assembly, wherein the LMCS dielectric layer comprises an oxide or a nitride;
- and
- a metal-to-metal solderless bond between the lower UMCS side and the upper LMCS side.
9 more elements
Dependencies are inferred from the claim text.