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US 12,014,987 B2Granted
Electro-migration reduction
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chen Ho, Chien Lin, Cheng-Yeh Yu, Hsin-Hsing Chen, Ju Ru Hsieh
Life of this patent
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Abstract
The present disclosure provides a structure and a method to reduce electro-migration. An interconnect structure according to the present disclosure includes a conductive feature embedded in a dielectric layer, a capping barrier layer disposed over the conductive feature and the dielectric layer, and an adhesion layer sandwiched between the capping barrier layer and the dielectric layer. The adhesion layer includes a degree of crystallinity between about 40% and about 70%.
Claims20
A method, comprising:
- receiving a workpiece including:
- a dielectric layer,
- a conductive feature embedded in the dielectric layer, and
- a barrier layer disposed along an interface between the dielectric layer and the conductive feature to space the conductive feature from the dielectric layer;
- selectively depositing a conductive capping layer on top surfaces of the conductive feature and the barrier layer;
- after the selectively depositing of the conductive capping layer, selectively forming a first adhesion layer over a top surface of the dielectric layer;
- annealing the first adhesion layer to form a second adhesion layer;
- and
- depositing a dielectric capping layer over the conductive capping layer and the second adhesion layer.
6 more elements
A method, comprising:
- receiving a workpiece including:
- a dielectric layer,
- a conductive feature embedded in the dielectric layer, and
- a barrier layer disposed along an interface between the dielectric layer and the conductive feature to space the conductive feature from the dielectric layer;
- selectively depositing a conductive capping layer on top surfaces of the conductive feature and the barrier layer;
- after the selectively depositing of the conductive capping layer, depositing a first adhesion layer over the workpiece using atomic layer deposition (ALD);
- annealing the first adhesion layer to form a second adhesion layer;
- and
- depositing a dielectric capping layer over the conductive capping layer and the second adhesion layer.
6 more elements
A contact feature, comprising:
- a dielectric layer;
- a conductive feature embedded in the dielectric layer;
- a barrier layer disposed along an interface between the dielectric layer and the conductive feature,
- a conductive barrier layer disposed on and in direct contact with top surfaces of the conductive feature and the barrier layer;
- an adhesion layer disposed over the dielectric layer and the conductive barrier layer;
- and
- a dielectric barrier layer over the adhesion layer,
- wherein the dielectric barrier layer comprises aluminum nitride.
5 more elements
Dependencies are inferred from the claim text.