Method for preparing semiconductor device structure with conductive plugs of different aspect ratios and manganese-containing lining layer

A method for preparing a semiconductor device structure, comprising:

• preparing a substrate having a pattern-dense region and a pattern-loose region;
• forming a first conductive layer over the substrate;
• forming a first dielectric layer over the first conductive layer;
• etching the first dielectric layer to form a first opening exposing the first conductive layer;
• forming a first lining layer and a first conductive plug in the first opening, wherein the first conductive plug is surrounded by the first lining layer;
• forming a second conductive layer over the first dielectric layer to cover the first lining layer and the first conductive plug in the first opening;
• forming a second dielectric layer over the second conductive layer;
• etching the second dielectric layer to form a second opening exposing the second conductive layer, wherein a bottom surface of the second opening is formed at a top surface of the second conductive layer;
• and
• forming a second lining layer and a second conductive plug in the second opening, wherein the second conductive plug is surrounded by the second lining layer, wherein the second lining layer is formed on a top surface of the second dielectric layer and the bottom surface of the second opening;
• wherein forming the second lining layer comprises:
• forming a first sub-lining layer over the top surface of the second dielectric layer, wherein sidewalls and the bottom surface of the second opening are covered by the first sub-lining layer, and wherein the first sub-lining layer comprises manganese silicon (MnSi);
• and
• forming a second sub-lining layer over the first sub-lining layer, wherein the second sub-lining layer comprises copper manganese (CuMn).