Methods of forming semiconductor packages

A method comprising:

• depositing a seed layer on a surface of a dielectric layer;
• plating a conductive material on the seed layer;
• etching exposed portions of the seed layer, residual portions of the seed layer remaining buried in the dielectric layer;
• performing a plasma treatment process on the dielectric layer to expose the residual portions of the seed layer and to form hydroxyl groups dangling from the surface of the dielectric layer;
• removing the residual portions of the seed layer exposed by the plasma treatment process;
• dispensing an encapsulant on the surface of the dielectric layer, the encapsulant comprising a nucleophile;
• and
• curing the encapsulant to form covalent bonds between the nucleophile and the hydroxyl groups.

A method comprising:

• forming a pit in a surface of a dielectric layer;
• sputtering a metal into the pit;
• thinning the dielectric layer to expose the metal in the pit;
• removing the metal exposed by the thinning of the dielectric layer;
• adhering an integrated circuit die to the surface of the dielectric layer;
• forming an encapsulant around the integrated circuit die and on the surface of the dielectric layer;
• and
• forming a redistribution structure on the encapsulant, the redistribution structure comprising redistribution lines connected to the integrated circuit die.