Semiconductor devices including through-silicon-vias and methods of manufacturing the same and semiconductor packages including the semiconductor devices

A method of manufacturing a semiconductor device, the method comprising:

• forming a preliminary via electrode through a portion of a substrate, the preliminary via electrode including a conductive layer and a barrier layer surrounding a sidewall of the conductive layer;
• partially removing the substrate to expose a portion of the preliminary via electrode;
• forming a protection layer structure on the substrate to cover the exposed portion of the preliminary via electrode;
• partially etching the protection layer structure and the barrier layer to form a protection layer pattern structure and a barrier layer pattern, respectively, wherein a portion of the conductive layer is exposed;
• wet etching the exposed portion of the conductive layer to form a conductive pattern, wherein the barrier layer pattern is wet etched so that a portion of the barrier layer pattern above the conductive pattern has a gradually decreasing width from a bottom toward a top thereof, and the conductive pattern and the barrier layer pattern form a via electrode;
• and
• forming a pad structure on the via electrode.