Semiconductor device having a source/drain contact plug with an upwardly protruding portion

A semiconductor device, comprising:

• an active region extending in a first direction on a substrate;
• a gate electrode extending in a second direction to intersect the active region;
• channel layers spaced apart from each other in a third direction, perpendicular to an upper surface of the substrate, on the active region and surrounded by the gate electrode;
• source/drain regions on both sides of the gate electrode and connected to the channel layers;
• a contact plug connected to each of the source/drain regions on each of the source/drain regions;
• and
• a gate capping layer on the gate electrode and having a width greater than a width of the gate electrode,
• wherein the contact plug includes a first portion extending in the second direction, and a second portion protruding upwardly from a portion of the first portion and defining at least one recess region of the contact plug, and
• wherein a length of an upper surface of the second portion in the first direction is greater than a length of a lower surface of the first portion in the first direction.

A semiconductor device, comprising:

• an active region extending in a first direction on a substrate;
• a gate electrode extending in a second direction to intersect the active region;
• source/drain regions on both sides of the gate electrode;
• a contact plug connected to each of the source/drain regions;
• a gate capping layer on the gate electrode and having a recessed edge in a shape recessed from an upper surface;
• and
• a contact insulating layer filling the recessed edge of the gate capping layer,
• wherein the contact plug includes a first portion extending in the second direction, and a second portion protruding upwardly from a portion of the first portion and defining at least one recess region of the contact plug, and
• wherein the contact insulating layer fills the at least one recess region of the contact plug.