Tungsten gapfill using molybdenum co-flow
AssigneeApplied Materials, Inc.
InventorsXi Cen, Kai Wu
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Abstract
Some embodiments of the disclosure relate to methods for forming a bottom-up tungsten gapfill. Some embodiments of the disclosure relate to methods for reducing the deposition rate of tungsten by chemical vapor deposition. A molybdenum halide precursor is added to a tungsten halide precursor and a reductant. The co-flow of tungsten halide and molybdenum halide demonstrates either reduced or eliminated tungsten growth.
Claims12
A method of forming bottom-up tungsten gapfill, the method comprising simultaneously exposing a substrate with a feature therein to flows of a tungsten halide, a molybdenum halide and a reductant, the tungsten halide comprising WF6 and the molybdenum halide comprising MoF6, and a ratio of a flow rate of WF6:MoF6 is in a range of 5:1 to 100:1, the feature defined by a depth from a top surface of the substrate to a bottom and width between two sidewalls, wherein tungsten is formed on the bottom without substantial deposition on the top surface of the substrate.
Dependencies are inferred from the claim text.