Method of manufacturing semiconductor device and non-transitory computer-readable recording medium

A substrate processing apparatus comprising:

• a process chamber in which a substrate is processed;
• a sensor configured to measure an oxygen partial pressure value in the process chamber;
• and
• a controller configured to be capable of checking a leak from the process chamber based on the oxygen partial pressure value,
• wherein an inner pressure of the process chamber is capable of being controlled when the oxygen partial pressure value is below the predetermined threshold value,
• at least one of (i) purging the process chamber or (ii) exhausting the process chamber is capable of being performed when the oxygen partial pressure value is equal to or greater than the predetermined threshold value, and
• the predetermined threshold value is determined in advance by a relationship between the oxygen partial pressure value acquired in advance and a sheet resistance value of a substrate on which a titanium nitride film is formed.

A method of manufacturing a semiconductor device, comprising:

• (A) checking a leak from a process chamber before a substrate is processed,
• wherein (A) comprises:
• (a) measuring an oxygen partial pressure value of the process chamber;
• (b) adjusting an inner pressure of the process chamber when the oxygen partial pressure value measured in (a) is lower than a threshold value;
• and
• (c) performing at least one of:
• purging the process chamber or vacuum-exhausting the process chamber, when the oxygen partial pressure value measured in (a) is equal to or greater than the threshold value,
• wherein the controller is further configured to be incapable of detecting the oxygen partial pressure value when the inner pressure of the process chamber is greater than a predetermined pressure.

A method of manufacturing a semiconductor device, comprising:

• (A) checking a leak from a process chamber before a substrate is processed, wherein (A) comprises:
• (a) measuring an oxygen partial pressure value of the process chamber;
• (b) adjusting an inner pressure of the process chamber when the oxygen partial pressure value measured in (a) is lower than a threshold value;
• and
• (c) performing at least one of:
• purging the process chamber or vacuum-exhausting the process chamber, when the oxygen partial pressure value measured in (a) is equal to or greater than the threshold value,
• wherein the predetermined threshold value is determined in advance by a relationship between the oxygen partial pressure value acquired in advance and a sheet resistance value of a substrate on which a titanium nitride film is formed.