Device for manufacturing semiconductor substrate comprising temperature gradient inversion means and method for manufacturing semiconductor substrate

A device for manufacturing a semiconductor substrate comprising:

• a main container that accommodates a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate;
• a heating furnace including a heating chamber that accommodates the main container, and a heater that performs heating in a manner to form a temperature gradient between the semiconductor substrate and the release and reception body;
• a temperature gradient inversion means that inverts high and low of the temperature gradient,
• wherein the temperature gradient inversion means is one or more selected from a temperature control means that controls a temperature in the main container in the heater, a main container control means that controls a position or orientation of the main container, or a heat radiation means that radiates heat in the heating chamber to the outside of the heating chamber,
• wherein the temperature control means is a means that controls a heat generation amount of the heater, or a means that controls a position or orientation of the heater;
• wherein the main container control means is a moving means to reverse the high and low temperature gradient between the semiconductor substrate and the release and reception body by moving the position of the main container in the heating furnace, or a rotation mechanism to reverse the high and low temperature gradient between the semiconductor substrate and the release and reception body by rotating the main container;
• and
• wherein the heat radiation means is an opening and closing part to reverse the high and low temperature gradient between the semiconductor substrate and the release and reception body by controlling the open and close state.

A device for manufacturing a semiconductor substrate comprising:

• a main container that accommodates a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate;
• and
• a heating furnace including a heating chamber that accommodates the main container, and a heater that performs heating in a manner to form a temperature gradient between the semiconductor substrate and the release and reception body,
• wherein at least a first heating chamber and a second heating chamber are provided as the heating chamber,
• high and low of a temperature gradient of the second heating chamber is opposite to high and low of a temperature gradient of the first heating chamber, and
• wherein the first heating chamber and the second heating chamber are adjacent to each other via the heater.

A device for manufacturing a semiconductor substrate comprising:

• a main container that accommodates a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate;
• and
• a heating furnace including a heating chamber that accommodates the main container, and a heating means that performs heating in a manner to form a temperature gradient between the semiconductor substrate and the release and reception body,
• wherein at least a first heating chamber and a second heating chamber are provided as the heating chamber, and
• high and low of a temperature gradient of the second heating chamber is opposite to high and low of a temperature gradient of the first heating chamber,
• wherein the first heating chamber and the second heating chamber each include an independent heating means.

A device for manufacturing a semiconductor substrate comprising:

• a main container that accommodates a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate;
• and
• a heating furnace including a heating chamber that accommodates the main container, and a heating means that performs heating in a manner to form a temperature gradient between the semiconductor substrate and the release and reception body,
• wherein at least a first heating chamber and a second heating chamber are provided as the heating chamber, and
• high and low of a temperature gradient of the second heating chamber is opposite to high and low of a temperature gradient of the first heating chamber,
• wherein heat insulating materials having different thicknesses are respectively provided in the first heating chamber and the second heating chamber.