Interposer and method of manufacturing the interposer

A method of manufacturing an interposer, the method comprising:

• providing a substrate including a first region, and a second region adjacent to the first region;
• forming a first mold structure on the substrate;
• forming a photoresist layer on the first mold structure, the photoresist layer extending over the first region and the second region of the substrate;
• forming a first transfer pattern over the photoresist layer on the first region, using a first photomask;
• forming a second transfer pattern over the photoresist layer on the second region, using the first photomask;
• forming a mask pattern including a plurality of openings on the first mold structure, using the first transfer pattern and the second transfer pattern;
• forming a lower electrode in the first mold structure corresponding to the openings, in each of the openings, the lower electrode having an inner face facing a center of the opening and an outer face facing away from the center of the opening, the inner and outer faces being opposing faces of the lower electrode;
• forming a support structure extending between and contacting the outer face of the lower electrode in a first opening of the openings to the outer face of the lower electrode in a second opening of the openings;
• forming a dielectric layer which covers the lower electrode and the support structure, the dielectric layer contacting both the inner face of the lower electrode and the outer face of the lower electrode;
• and
• forming an upper electrode on the dielectric layer such that the dielectric layer is between the lower and upper electrodes, and the upper electrode is within the openings.

A method of manufacturing an interposer, the method comprising:

• providing a substrate including a first region and a second region adjacent to the first region;
• forming a first mold structure on the substrate;
• forming a first photoresist layer on the first mold structure, the first photoresist layer extending over the first region and the second region of the substrate;
• forming a first transfer pattern over the first photoresist layer on the first region, using a first photomask;
• forming a second transfer pattern over the first photoresist layer on the second region, using the first photomask;
• forming a first mask pattern on the first mold structure, using the first transfer pattern and the second transfer pattern;
• forming a first trench and a second trench in the first mold structure, using the first mask pattern;
• forming a lower electrode which covers an inner wall of the first trench and an inner wall of the second trench,
• in each of the first trench and the second trench, the lower electrode having an inner face facing a center of the first trench or the second trench, respectively, and an outer face facing away from the center of the first trench or second trench, respectively, the inner and outer faces being opposing faces of the lower electrode;
• forming a support structure extending between and contacting the outer face of the lower electrode in the first trench to the outer face of the lower electrode in the second trench;
• forming a dielectric layer which covers the lower electrode and the support structure, the dielectric layer contacting both the inner face of the lower electrode and the outer face of the lower electrode;
• forming an upper electrode on the dielectric layer such that the dielectric layer is between the upper electrode and the lower electrode, and the upper electrode is both above and below the support structure;
• forming a first interlayer insulating layer on the upper electrode;
• forming a second photoresist layer on the first interlayer insulating layer;
• forming a third transfer pattern on the second photoresist layer, using a second photomask;
• forming a second mask pattern disposed between the first interlayer insulating layer and the second photoresist layer, using the third transfer pattern;
• forming a fourth transfer pattern on the second photoresist layer, using a third photomask;
• and
• forming a third mask pattern disposed between the first interlayer insulating layer and the second photoresist layer, using the fourth transfer pattern,
• a wiring layer being formed on the first interlayer insulating layer.