Semiconductor substrate structure and manufacturing method thereof

A semiconductor substrate structure, comprising:

• a first circuit structure, comprising a plurality of first circuit layers and a first bonding layer;
• a second circuit structure, comprising a plurality of second circuit layers and a second bonding layer, wherein the second circuit structure is disposed on the first circuit structure and is electrically connected to the first circuit structure, and the first bonding layer is bonded to the second bonding layer;
• and
• a third circuit structure, comprising a plurality of third circuit layers and a third bonding layer, wherein the second circuit structure is disposed between the first circuit structure and the third circuit structure and are electrically connected with each other, and the second circuit structure comprises another bonding layer relative to the first circuit structure, and the another bonding layer is bonded to the third bonding layer to form a multilayer redistribution structure.

A manufacturing method of a semiconductor substrate structure, comprising:

• forming a first circuit structure on a first temporary carrier, wherein the first circuit structure comprises a plurality of first circuit layers and a first bonding layer;
• forming a second circuit structure on a second temporary carrier, wherein the second circuit structure comprises a plurality of second circuit layers and a second bonding layer;
• and
• directly bonding the first circuit structure and the second circuit structure, so that the first bonding layer is bonded to the second bonding layer.

A manufacturing method of a semiconductor substrate structure, comprising:

• forming a first circuit structure on a first temporary carrier, wherein the first circuit structure comprises a plurality of first circuit layers and a first bonding layer;
• forming a second circuit structure on a second temporary carrier, wherein the second circuit structure comprises a plurality of second circuit layers and a second bonding layer;
• directly bonding the first circuit structure and the second circuit structure, so that the first bonding layer is bonded to the second bonding layer;
• forming a third circuit structure on the second circuit structure, wherein the third circuit structure comprises a plurality of third circuit layers and a third bonding layer;
• and
• bonding the second circuit structure and the third circuit structure, wherein the second circuit structure comprises another bonding layer relative to the first circuit structure, and the another bonding layer is bonded to the third bonding layer.

A manufacturing method of a semiconductor substrate structure, comprising:

• forming a second circuit structure on a second temporary carrier;
• forming a third circuit structure on the second circuit structure;
• bonding the second circuit structure and the third circuit structure;
• removing the second temporary carrier;
• forming a first circuit structure on a first temporary carrier;
• directly bonding the first circuit structure and the second circuit structure;
• removing the first temporary carrier;
• and
• forming a conductive pillar and a conductive cap on a surface of the first circuit structure, and forming an external terminal on a surface of the third circuit structure.