Memory, substrate structure of the memory, and method for preparing the substrate structure of the memory

A substrate structure of a memory, wherein the substrate structure is prepared by a method, the method comprising:

• providing a substrate;
• forming a first mask layer on a surface of the substrate, the first mask layer comprising a plurality of strip patterns extending in a direction and spaced apart from each other;
• forming a first dielectric layer on and covering the plurality of strip patterns of the first mask layer;
• patterning the first dielectric layer to form a plurality of sacrificial portions spaced apart from each other, the sacrificial portions covering a first portion of the plurality of strip patterns and exposing a second portion of the plurality of strip patterns;
• filling gaps between the sacrificial portions with a second dielectric material;
• forming, by removing the sacrificial portions while retaining the second dielectric material in the gaps, a second mask layer, with through-hole patterns exposing the first portion of the plurality of strip patterns formed in areas that correspond to the sacrificial portions in the second mask layer;
• and
• performing layer-by-layer etching using the first mask layer and the second mask layer as masks to transfer the strip patterns and the through-hole patterns to the substrate to form a plurality of active areas arranged in an array.