Etching method and plasma processing apparatus

An etching method performed in a plasma processing apparatus, the etching method being performed in a state where a substrate is placed in a chamber of the plasma processing apparatus, the etching method comprising:

• forming plasma from a processing gas containing a fluorocarbon gas within the chamber to form a deposit containing fluorocarbon on the substrate, the substrate having a first region formed of a silicon containing material and a second region formed of a metal containing material;
• and
• forming plasma from a rare gas within the chamber to etch the first region by supplying rare gas ions to the substrate to react the fluorocarbon contained in the deposit on the substrate with the silicon containing material of the first region,
• wherein, in the forming of the plasma from the processing gas, a magnetic field is not formed within the chamber by an electromagnet,
• in the forming of the plasma from the rare gas, a magnetic field distribution in which a horizontal component on an edge side of the substrate is higher than a horizontal component on a center of the substrate is formed by the electromagnet.