Highly etch selective amorphous carbon film

A patterned amorphous carbon hardmask comprising:

• a patterned amorphous carbon film, wherein the patterned amorphous carbon film further comprises a carbon dopant implanted into the patterned amorphous carbon film and optionally an additional dopant or inert species selected from carbon, boron, nitrogen, nitrogen dimer, silicon, phosphorous, argon, helium, neon, krypton, xenon, beryllium, germanium, or combinations thereof;
• wherein the patterned amorphous carbon film has a Young's modulus (GPa) of from about 70 to about 200 GPa;
• wherein the patterned amorphous carbon film has a stress (MPa) of from about −600 MPa to about 0 MPa;
• wherein the patterned amorphous carbon film comprises a plasma-etched pattern;
• and
• wherein the amorphous carbon hardmask comprises at least 85 atomic percentage of carbon, the carbon dopant comprising at least 1 to 30 atomic percentage of the at least 85 atomic percentage of carbon.

An amorphous carbon hardmask comprising:

• an amorphous carbon film, wherein the amorphous carbon film further comprises a carbon dopant implanted into the amorphous carbon film and optionally an additional dopant or inert species selected from boron, nitrogen, nitrogen dimer, silicon, phosphorous, argon, helium, neon, krypton, xenon, beryllium, germanium, or combinations thereof,
• wherein the amorphous carbon film has a Young's modulus (GPa) of from about 70 to about 200 GPa, a stress (MPa) of from about −600 MPa to about 0 MPa, an in-plane distortion of less than 3 nanometers overlay error, and the amorphous carbon film comprises at least 85 atomic percentage of carbon, the carbon dopant comprising at least 1 to 30 atomic percentage of the at least 85 atomic percentage of carbon;
• and
• an underlayer disposed beneath the amorphous carbon film.