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US 12,014,909 B2Granted
Plasma processing apparatus and plasma processing system
AssigneeHitachi High-Tech Corporation
InventorsRyoji Asakura, Shota Umeda, Daisuke Shiraishi, Akira Kagoshima, Satomi Inoue
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Abstract
The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.
Claims1
A semiconductor device manufacturing system comprising:
- a plasma processing unit that performs plasma processing of a sample;
- a control unit connected via a network interface with the plasma processing unit and configured to control the plasma processing performed by the plasma processing unit on the sample;
- and
- a state manager coupled to the control unit and configured to store a management value indicating a state of the plasma processing unit,
- wherein the control unit is configured to
- select one of a plurality of prediction models for predicting a result of the plasma processing for each of a plurality of divided data of the management value;
- predict the result of the plasma processing by using the selected prediction model selected for each said divided data;
- and
- cause the plasma processing unit to process the sample based on the selected prediction model selected for each said divided data, and
- wherein the divided data is data divided based on a threshold of the management value.
7 more elements
Dependencies are inferred from the claim text.