Apparatus and method fabricating semiconductor device

A method of fabricating a semiconductor device, the method comprising:

• seating a substrate having a substrate radius on an electrostatic chuck having a chuck radius;
• applying a first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, wherein the first radio-frequency power is provided by a first radio-frequency power supply;
• and
• generating a magnetic field in the region at least above the electrostatic chuck using a magnet disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the second radio-frequency power is applied to the magnet by a second radio-frequency power supply including a power source generating a source voltage, and a modulator connected between the power source and the magnet, and wherein the modulator is configured to generate a pulse through modulation of the source voltage,
• wherein the substrate includes a center portion having a first radial width, an intermediate portion having a second radial width, and an edge portion having a third radial width, the intermediate portion is disposed between the center portion and the edge portion, and the magnet has an inner radius equal to the second radial width,
• wherein the modulator comprises:
• a pulse generator configured to generate the pulse, and
• a peak generator connected to the pulse generator and configured to generate a peak of the pulse,
• wherein the pulse generator comprises:
• first delay cells connected in series to the power source;
• and
• a first gate driver connected to the first delay cells to provide a trigger signal to the first delay cells, and
• wherein the peak generator comprises:
• an additional power source;
• second delay cells connected in series to the additional power source;
• and
• a second gate driver connected to the first gate driver and the second delay cells to provide the trigger signal to the second delay cells.

An apparatus fabricating a semiconductor device, the apparatus comprising:

• a chamber;
• an electrostatic chuck having a chuck radius and disposed in a lower portion of the chamber, wherein the electrostatic chuck is configured to seat a substrate;
• a shower head disposed in an upper portion of the chamber above the electrostatic chuck and configured to provide gas into a region at least above the electrostatic chuck;
• and
• a magnet disposed on the shower head and configured to induce a magnetic field in the region at least above the electrostatic chuck;
• a first radio-frequency power supply configured to apply first power to the electrostatic chuck to induce plasma in the region at least above the electrostatic chuck, and
• a second radio-frequency power supply configured to apply second power to the magnet to generate a magnetic field in the region at least above the electrostatic chuck, the second radio-frequency power supply including a power source generating a source voltage, and a modulator connected between the power source and the magnet, wherein the modulator is configured to generate a pulse through modulation of the source voltage,
• wherein the magnet has a ring shape including an inner radius ranging from between about one-half to one-fourth of the chuck radius,
• wherein the modulator comprises:
• a pulse generator configured to generate the pulse;
• and
• a peak generator connected to the pulse generator and configured to generate a peak of the pulse,
• wherein the pulse generator comprises:
• first delay cells connected in series to the power source;
• and
• a first gate driver connected to the first delay cells to provide a trigger signal to the first delay cells, and
• wherein the peak generator comprises:
• an additional power source;
• second delay cells connected in series to the additional power source;
• and
• a second gate driver connected to the first gate driver and the second delay of cells to provide the trigger signal to the second delay of cells.