Wafer processing apparatus

A wafer processing apparatus configured to perform a wafer etching process using a reactive ion beam, the wafer processing apparatus comprising:

• a chamber body defining a chamber, the chamber body configured that a wafer is arranged in the chamber, the chamber body defining a plasma region configured that plasma is generated in the plasma region;
• first and second electrodes arranged between the plasma region and a wafer support configured to receive the wafer, each of the first and second electrodes having apertures configured to guide a path of ions of the plasma, wherein the first and second electrodes are flat and parallel to each other and the apertures of the first electrode are misaligned with the apertures of the second electrode;
• a radio frequency (RF) power source configured to provide RF power to generate the plasma;
• a first power source configured to apply a first voltage to the first electrode to generate the reactive ion beam by accelerating positive ions of the plasma;
• and
• a second power source configured to apply a second voltage to the wafer to control a path of the reactive ion beam,
• wherein the wafer processing apparatus is configured that the first power source accelerates the ions to generate a plurality of reactive ion beams, each of the plurality of reactive ion beams traveling through a respective one of the apertures,
• wherein a first aperture in the first electrode and a second aperture in the second electrode form a first pair of apertures, wherein the first aperture is disposed directly above the second aperture, and a third aperture in the first electrode and a fourth aperture in the second electrode form a second pair of apertures, wherein the third aperture is disposed directly above the fourth aperture, and
• wherein a central direction of travel of a reactive ion beam traveling through the first pair of apertures is different from a central direction of travel of a reactive ion beam simultaneously traveling through the second pair of apertures such that the reactive ion beam traveling through the first pair of apertures intersects the reactive ion beam traveling through the second pair of apertures after passing through the first and second electrodes.

A wafer processing apparatus configured to make a reactive ion beam be incident on a wafer at first to third angles with respect to a first direction perpendicular to an upper surface of the wafer, the wafer processing apparatus comprising:

• a chamber body defining a plasma region configured that plasma is formed in the plasma region;
• a wafer support arranged in the chamber body and configured to support and fix the wafer;
• first and second electrodes arranged between the wafer support and the plasma region and each having apertures configured to guide a path of ions of the plasma, wherein the first and second electrodes are flat and parallel to each other and the apertures of the first electrode are misaligned with the apertures of the second electrode;
• a first power source electrically connected to the first electrode;
• and
• a second power source electrically connected to the wafer support,
• wherein the second power source is configured to apply voltages of at least three different levels to the wafer through the wafer support,
• wherein the wafer processing apparatus is configured that the first power source accelerates the ions to generate a plurality of reactive ion beams, each of the plurality of reactive ion beams traveling through a respective one of the apertures,
• wherein a first aperture in the first electrode and a second aperture in the second electrode form a first pair of apertures, wherein the first aperture is disposed directly above the second aperture, and a third aperture in the first electrode and a fourth aperture in the second electrode form a second pair of apertures, wherein the third aperture is disposed directly above the fourth aperture, and
• wherein a central direction of travel of a reactive ion beam traveling through the first pair of apertures is different from a central direction of travel of a reactive ion beam simultaneously traveling through the second pair of apertures such that the reactive ion beam traveling through the first pair of apertures intersects the reactive ion beam traveling through the second pair of apertures after passing through the first and second electrodes.