Programming techniques for polarity-based memory cells
AssigneeMicron Technology, Inc.
InventorsInnocenzo Tortorelli, Mattia Boniardi, Mattia Robustelli
Life of this patent
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Abstract
Methods, systems, and devices for programming techniques for polarity-based memory cells are described. A memory device may use a first type of write operation to program one or more memory cells to a first state and a second type of write operation to program one or more memory cells to a second state. Additionally or alternatively, a memory device may first attempt to use the first type of write operation to program one or more memory cells, and then may use the second type of write operation if the first attempt is unsuccessful.
Claims20
A method, comprising:
- receiving a write command indicating data to be written to a plurality of memory cells of a memory device;
- applying a first pulse to a first set of memory cells of the plurality of memory cells based at least in part on the data comprising a first data type;
- and
- applying a second pulse to a second set of memory cells of the plurality of memory cells based at least in part on the data comprising a combination of the first data type and a second data type.
An apparatus, comprising:
- a memory device;
- and
- a controller coupled with the memory device and configured to cause the apparatus to:
- receive a write command indicating data to be written to a plurality of memory cells of the memory device;
- apply a first pulse to a first set of memory cells of the plurality of memory cells based at least in part on the data comprising a first data type;
- and
- apply a second pulse to a second set of memory cells of the plurality of memory cells based at least in part on the data comprising a combination of the first data type and a second data type.
A non-transitory computer-readable medium storing code, the code comprising instructions executable by a processor to:
- receive a write command indicating data to be written to a plurality of memory cells of a memory device;
- apply a first pulse to a first set of memory cells of the plurality of memory cells based at least in part on the data comprising a first data type;
- and
- apply a second pulse to a second set of memory cells of the plurality of memory cells based at least in part on the data comprising a combination of the first data type and a second data type.
Dependencies are inferred from the claim text.