Non-volatile memory and operating method thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsLi Xiang, Weihua Shi
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Abstract
The present application discloses a non-volatile memory and an operating method of the non-volatile memory. The non-volatile memory includes a plurality of memory cells, and unselected word lines connected with the memory cells. The method includes applying a first voltage rising at a first slope to unselected word lines to charge the unselected word lines, and stopping applying the first voltage to the unselected word lines in response to that the first voltage rises to a predetermined voltage. The predetermined voltage is higher than a pass voltage of a plurality of memory cells connected with the unselected word lines.
Claims20
A method of operating a non-volatile memory, the non-volatile memory comprising a plurality of memory cells, and unselected word lines connected with the plurality of memory cells, the method comprising:
- applying a first voltage rising at a first slope to the unselected word lines to charge the unselected word lines and to allow a second voltage on the unselected word lines to rise at a second slope, the first slope being greater than the second slope;
- and
- stopping applying the first voltage to the unselected word lines in response to the first voltage rising at the first slope to reach a predetermined voltage, wherein the predetermined voltage is higher than a pass voltage of the plurality of memory cells connected with the unselected word lines.
A non-volatile memory, comprising:
- a plurality of memory cells;
- unselected word lines connected with the plurality of memory cells;
- a voltage generator configured to supply a first voltage to the unselected word lines;
- and
- a controller coupled to the voltage generator and controlling the voltage generator to:
- apply the first voltage rising at a first slope to the unselected word lines to charge the unselected word lines;
- stop applying the first voltage to the unselected word lines in response to the first voltage rising to a predetermined voltage, wherein the predetermined voltage is higher than a pass voltage of the plurality of memory cells connected with the unselected word lines;
- and
- allow a second voltage on the unselected word lines to rise at a second slope when applying the first voltage rising at the first slope to the unselected word lines, the first slope being greater than the second slope, and the second voltage being not higher than the pass voltage when the first voltage rises to the predetermined voltage.
Dependencies are inferred from the claim text.