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US 12,014,770 B2Granted
Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein
AssigneeR&D3 LLC
InventorRavindraraj Ramaraju
Life of this patent
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Abstract
The present disclosure relates to circuits, systems, and methods of operation for a memory device. In an example, a memory device includes a plurality of memory cells, each memory cell having a variable impedance that varies in accordance with a respective data value stored therein; and a read circuit configured to read the data value stored within a selected memory cell based upon a variable time delay determination of a signal node voltage change corresponding to the variable impedance of the selected memory cell.
Claims20
A memory device comprising:
- a plurality of memory cells, each memory cell having at least two data values, and each memory cell having an effective variable impedance that varies in accordance with a respective data value stored for each data value therein;
- a plurality of tracking memory cells having a predetermined effective impedance in accordance with a respective data value stored therein;
- and
- a read circuit configured to read an effective data value stored within a selected memory cell based upon a variable time delay determination of a signal node voltage change corresponding to the variable impedance of the selected memory cell with respect to the predetermined impedance of a selected tracking memory cell, wherein the effective data value corresponds to a plurality of bits.
1 more element
A memory device comprising:
- a plurality of memory cells in an array, each memory cell having at least two data values;
- a plurality of tracking cells in the array with a predetermined data value;
- and
- a read circuit configured to effect a voltage transition of a signal node at a variable rate corresponding to a data value stored within a selected memory cell, and to perform a time-to-transition measurement of the signal node to determine an effective data value stored within the selected memory cell with respect to the predetermined data value stored within a selected tracking cell, wherein the effective data value corresponds to a plurality of bits.
1 more element
Dependencies are inferred from the claim text.