Via structure and methods of forming the same

A method comprising:

• providing a substrate having a first conductive feature disposed therein;
• forming a first dielectric layer on the first conductive feature;
• forming a patterned second dielectric layer on the first dielectric layer;
• forming a third dielectric layer on the patterned second dielectric layer;
• forming an opening through the third dielectric layer to the first conductive feature;
• forming a first conductive material in the opening directly on the first conductive feature;
• and
• performing a planarization process on the first conductive material, the third dielectric layer, and the patterned second dielectric layer to expose a top surface of the first dielectric layer.

A method comprising:

• providing a first electrode layer;
• forming a first material layer on the first electrode layer;
• forming a second material layer on the first material layer;
• patterning the second material layer to form a first segment and a second segment of the second material layer;
• forming a third material layer on the first and second segments of the second material layer such that the first and second segments of the second material layer are at least partially disposed within the third material layer;
• forming a conductive feature through the first and second segments of the second material layer to the first electrode layer;
• removing the third material layer, a first portion of the conductive feature and the first and second segments of the second material layer.