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US 12,010,932 B2Granted
Resistive random access memory (RRAM) cells and methods of construction
AssigneeMicrochip Technology Incorporated
InventorYaojian Leng
Life of this patent
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AssigneeMicrochip Technology Incorporated
InventorYaojian Leng
Estimating the term…
Resistive random access memory (RRAM) cells, for example conductive bridging random access memory (CBRAM) cells and oxygen vacancy-based RRAM (OxRRAM) cells are provided. An RRAM cell may include a metal-insulator-metal (MIM) structure formed between adjacent metal interconnect layers or between a silicided active layer (e.g., including MOSFET devices) and a first metal interconnect layer. The MIM structure of the RRAM cell may be formed by a damascene process including forming a tub opening in a dielectric region, forming a cup-shaped bottom electrode in the tub opening, forming a cup-shaped insulator in an interior opening defined by the cup-shaped bottom electrode, and forming a top electrode in an interior opening defined by the cup-shaped insulator. The cup-shaped bottom electrode, or a component thereof (in the case of a multi-layer bottom electrode) may be formed concurrent with interconnect vias, e.g., by deposition of tungsten or other conformal metal.
An integrated circuit structure, comprising:
An integrated integrated circuit structure, comprising:
An integrated integrated circuit structure, comprising:
Dependencies are inferred from the claim text.