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US 12,010,931 B2Granted
Resistive random-access memory (RRAM) device and forming method thereof
AssigneeUnited Microelectronics Corp.
InventorsChia-Ching Hsu, Wang Xiang, Shen-De Wang
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Abstract
A RRAM (resistive random-access memory) device includes a bottom electrode line, a top electrode island and a resistive material. The bottom electrode line is directly on a first metal structure. The top electrode island is disposed beside the bottom electrode line. The resistive material is sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island. The present invention also provides a method of forming said RRAM device.
Claims10
A resistive random-access memory (RRAM) device, comprising:
- a bottom electrode line directly on a first metal structure;
- a top electrode island disposed beside the bottom electrode line;
- a resistive material sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island;
- and
- a second metal structure directly contacting the resistive material and the top electrode island.
2 more elements
Dependencies are inferred from the claim text.