Memory device and manufacturing method therefor
AssigneeIndustry-University Cooperation Foundation Hanyang University Erica Campus
InventorsTae Joo Park, Dae Woong Kim, Tae Jun Seok, Hye Rim Kim
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Abstract
A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at % (exclusive) to 88 at % (exclusive).
Claims18
A memory device comprising:
- a first electrode;
- a resistance change layer disposed on the first electrode and including lithium, aluminum, and oxygen;
- and
- a second electrode disposed on the resistance change layer,
- wherein the resistance change layer has a lithium content ratio Li/(Li+Al) that is more than 40 at % and less than 60 at %.
A method of manufacturing a memory device, the method comprising:
- forming a first electrode on a substrate;
- performing a first unit process for reacting a first precursor that includes lithium with a first reaction source that includes oxygen;
- performing a second unit process for reacting a second precursor that includes aluminum with a second reaction source that includes oxygen, wherein performing the first unit process and the second unit process result in formation of a resistance change layer that includes lithium, aluminum, and oxygen on the first electrode;
- and
- forming a second electrode on the resistance change layer,
- wherein the first unit process and the second unit process are separately and repeatedly performed a plurality of times, in which a repetition ratio between the first unit process and the second unit process is controlled, thereby controlling a lithium content ratio Li/(Li+Al) in the resistance change layer.
A memory device comprising:
- a first electrode;
- a resistance change layer disposed on the first electrode and comprising lithium, titanium, and oxygen;
- and
- a second electrode disposed on the resistance change layer,
- wherein the resistance change layer has a lithium content ratio Li/(Li+Ti) that is more than 37 at % and less than 72 at %, and
- wherein the resistance change layer comprises a plurality of first resistance change layers that comprise lithium, and that are alternatively disposed with a plurality of second resistance change layers that comprise titanium.
A method of manufacturing a memory device, the method comprising:
- forming a first electrode on a substrate;
- performing a first unit process for reacting a first precursor that comprises lithium with a first reaction source that comprises oxygen;
- performing a second unit process for reacting a second precursor that comprises titanium with a second reaction source that comprises oxygen, wherein performing the first unit process and the second unit process result in formation of a resistance change layer that comprises lithium, titanium, and oxygen on the first electrode;
- and
- forming a second electrode on the resistance change layer,
- wherein the first unit process and the second unit process are separately and repeatedly performed a plurality of times, in which a repetition ratio between the first unit process and the second unit process is controlled, thereby controlling a lithium content ratio Li/(Li+Ti) in the resistance change layer.
Dependencies are inferred from the claim text.