Magnetic tunnel junction (MTJ) device and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorChih-Wei Kuo
Life of this patent
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Abstract
A method of manufacturing a magnetic tunnel junction (MTJ) device, including steps of forming a dielectric layer comprising a metal line therein on a substrate, forming a magnetic tunneling junction element over the metal line, depositing a silicon nitride cap layer conformally covering the magnetic tunneling junction element and the dielectric layer, depositing a tantalum containing cap layer conformally covering the silicon nitride cap layer, removing parts of the tantalum containing cap layer and the silicon nitride cap layer, and disposing a metal plug directly on the magnetic tunneling junction element.
Claims12
A method of manufacturing a magnetic tunnel junction (MTJ) device, comprising:
- forming a dielectric layer comprising a metal line therein on a substrate;
- forming a magnetic tunneling junction element over the metal line;
- depositing a silicon nitride cap layer conformally covering the magnetic tunneling junction element and the dielectric layer;
- depositing a tantalum containing cap layer conformally covering the silicon nitride cap layer;
- removing parts of the tantalum containing cap layer and the silicon nitride cap layer to form silicon nitride spacers on sidewalls of the magnetic tunnel junction element and tantalum containing spacers on the silicon nitride spacers, wherein the tantalum containing spacers comprises a top part covering parts of a top surface of the magnetic tunnel junction element and a side part covering the sidewalls of the magnetic tunnel junction element, and the silicon nitride spacer is between the tantalum containing spacer and the magnetic tunnel junction element;
- and
- disposing a metal plug directly on the magnetic tunneling junction element.
Dependencies are inferred from the claim text.