Magnetic memory device and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsUng Hwan Pi, Dongkyu Lee
Life of this patent
Estimating the term…
Abstract
A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.
Claims5
A method for manufacturing a magnetic memory device, the method comprising:
- forming a conductive line and a preliminary magnetic pattern which are sequentially stacked on a substrate and extend in a first direction;
- forming a first interlayer insulating layer on the conductive line and the preliminary magnetic pattern;
- forming a tunnel barrier layer and a magnetic layer which are sequentially stacked on the first interlayer insulating layer;
- forming a mask pattern extending in a second direction intersecting the first direction on the magnetic layer;
- and
- performing an etching process of etching the magnetic layer, the tunnel barrier layer, the first interlayer insulating layer and the preliminary magnetic pattern by using the mask pattern as an etch mask,
- wherein the conductive line is an etch stop layer in the etching process.
Dependencies are inferred from the claim text.