Piezoelectric device with hydrogen getter
AssigneeTaiwan Semiconductor Manaufacturing Company, Ltd.
InventorsChih-Ming Chen, Chung-Yi Yu
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Abstract
The present disclosure relates to a method of forming a device. The method includes depositing a first layer of getter material on a substrate. A first electrode is formed in a first conductive layer deposited on the first layer of getter material. An insulator element is formed in a piezoelectric layer deposited on the first electrode. A second electrode is formed in a second conductive layer deposited on the insulator element. A first input-output electrode is formed to be conductively connected to the first layer of getter material and a second input-output electrode is formed to be conductively connected to the second electrode.
Claims20
A method of forming a device, comprising:
- depositing a first layer of getter material on a substrate;
- forming a first electrode in a first conductive layer deposited on the first layer of getter material, wherein an upper surface of the first layer of getter material extends in opposing directions past outer sidewalls of the first electrode;
- forming an insulator element in a piezoelectric layer deposited on the first electrode;
- forming a second electrode formed in a second conductive layer deposited on the insulator element;
- forming a first input-output electrode that is conductively connected to the first layer of getter material;
- and
- forming a second input-output electrode that is conductively connected to the second electrode.
A method of forming a device, comprising:
- forming a first electrode layer, a second electrode layer, and a piezoelectric material over a substrate, wherein the first electrode layer is separated from the second electrode layer by the piezoelectric material;
- patterning the first electrode layer, the second electrode layer, and the piezoelectric material to form a piezoelectric layer between a first electrode and a second electrode;
- forming a getter material over the substrate, wherein the getter material contacts the first electrode and has a greater getter capacity for hydrogen than the first electrode;
- forming a passivation layer over the first electrode and the second electrode, wherein the passivation layer extends along a sidewall and over an upper surface of the piezoelectric layer;
- and
- forming a first input-output electrode to extend through the passivation layer and physically contact an upper surface of the getter material laterally outside of the first electrode.
A method of forming a device, comprising:
- forming a first electrode layer, a second electrode layer, and a piezoelectric material over a substrate, wherein the piezoelectric material is between the first electrode layer and the second electrode layer;
- patterning the first electrode layer, the second electrode layer, and the piezoelectric material to form a piezoelectric layer between a first electrode and a second electrode;
- forming a getter material over the substrate, wherein the getter material has a greater getter capacity for hydrogen than the second electrode, wherein the getter material completely covers an entire horizontally extending surface of the second electrode that extends between outermost sidewalls of the second electrode, and wherein the getter material has a width less than a width of the piezoelectric layer;
- and
- forming a first input-output electrode having a bottom surface that physically contacts an upper surface of the getter material.
Dependencies are inferred from the claim text.