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US 12,010,871 B2Granted
Thin film transistor and display device
AssigneeJapan Display Inc.
InventorsMasashi Tsubuku, Tatsuya Toda
Life of this patent
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Abstract
A thin film transistor including: an active layer formed of an oxide semiconductor including at least indium and gallium; a gate electrode; a first gate insulating layer disposed between the active layer and the gate electrode on the gate electrode side; and a second gate insulating layer, which is a hydrogen block layer, disposed between the active layer and the gate electrode on the active layer side.
Claims18
A thin film transistor comprising:
- an active layer formed of an oxide semiconductor including at least indium and gallium;
- a gate electrode;
- a first gate insulating layer disposed between the active layer and the gate electrode on the gate electrode side;
- a second gate insulating layer, which is a hydrogen block layer, disposed between the active layer and the gate electrode on the active layer side;
- a second gate electrode provided on an opposite side of the active layer from the gate electrode;
- a third gate insulating layer disposed between the active layer and the gate electrode on the gate electrode side;
- and
- a fourth gate insulating layer, which is a hydrogen block layer, disposed between the active layer and the gate electrode on the active layer side, wherein
- a total thickness of the first gate insulating layer and the second gate insulating layer is greater than a total thickness of the third gate insulating layer and the fourth gate insulating layer.
6 more elements
A display device having a pixel, the pixel comprising:
- a thin film transistor;
- and
- a pixel electrode connected to the thin film transistor, wherein
- the thin film transistor includes:
- an active layer formed of an oxide semiconductor including at least indium and gallium;
- at least one gate electrode;
- a first gate insulating layer disposed between the active layer and the gate electrode on the gate electrode side;
- a second gate insulating layer, which is a hydrogen block layer, disposed between the active layer and the gate electrode on the active layer side;
- a second gate electrode provided on an opposite side of the active layer from the gate electrode;
- a third gate insulating layer provided between the active layer and the gate electrode on the gate electrode side;
- and
- a fourth gate insulating layer, which is a hydrogen block layer, disposed between the active layer and the gate electrode on the active layer side, wherein
- a total thickness of the first gate insulating layer and the second gate insulating layer is greater than a total thickness of the third gate insulating layer and the fourth gate insulating layer.
10 more elements
Dependencies are inferred from the claim text.