Display device

A display device, comprising:

• a substrate having a surface;
• a first transistor disposed above the surface of the substrate and comprising:
• a first semiconductor comprising a silicon semiconductor;
• and
• a first gate electrode overlapping the first semiconductor in view of a normal direction of the surface;
• a second transistor disposed above the surface of the substrate and comprising:
• a second semiconductor comprising a first oxide semiconductor;
• a third transistor disposed above the surface of the substrate and comprising:
• a third semiconductor comprising a second oxide semiconductor;
• and
• a third gate electrode overlapping the third semiconductor in view of the normal direction of the surface;
• and
• a first electrode disposed above and electrically connected to the third semiconductor,
• wherein the first electrode overlaps the third gate electrode in a cross-sectional view of the display device, and
• wherein the first electrode overlaps the third semiconductor in view of the normal direction of the surface of the substrate.

A display device, comprising:

• a substrate having a surface;
• a first transistor disposed above the surface of the substrate and comprising:
• a first semiconductor comprising a silicon semiconductor;
• and
• a first gate electrode overlapping the first semiconductor in view of a normal direction of the surface;
• a second transistor disposed above the surface of the substrate and comprising:
• a second semiconductor comprising a first oxide semiconductor;
• a third transistor disposed above the surface of the substrate and comprising:
• a third semiconductor comprising a second oxide semiconductor;
• and
• a third gate electrode overlapping the third semiconductor in view of the normal direction of the surface;
• a fourth gate electrode overlapping the third semiconductor in a cross-sectional view of the display device;
• and
• a first electrode disposed above and electrically connected to the third semiconductor,
• wherein the first electrode overlaps the third gate electrode in the cross-sectional view of the display device, and
• wherein the third semiconductor is disposed between the third gate electrode and the fourth gate electrode.