Semiconductor device and electronic system including the same

A semiconductor device comprising:

• a peripheral circuit including a plurality of transistors,
• wherein each of the plurality of transistors includes:
• a gate extending in a second direction on an active region defined by an isolation region;
• and
• source and drain regions respectively extending in a first direction perpendicular to the second direction in the active region on first and second sides of the gate in the first direction,
• wherein the source and drain regions include:
• low-concentration source and drain doping regions including first low-concentration source and drain doping regions disposed in a gate-adjacent region adjacent to the gate and second low-concentration source and drain doping regions disposed in a gate-distant region separated from the gate by the gate-adjacent region;
• and
• high-concentration source and drain doping regions having higher doping concentrations than the low-concentration source and drain doping regions, and
• wherein a first length in the second direction of the first low-concentration source and drain doping regions is greater than a second length in the second direction of the second low-concentration source and drain doping regions.

An electronic system comprising:

• a main substrate;
• a semiconductor device disposed on the main substrate;
• and
• a controller electrically connected to the semiconductor device,
• wherein the semiconductor device includes a peripheral circuit including a plurality of transistors,
• wherein each of the plurality of transistors includes:
• a gate extending in a second direction on an active region defined by an isolation region;
• and
• source and drain regions respectively extending in a first direction perpendicular to the second direction in the active region on first and second sides of the gate,
• wherein the source and drain regions include:
• low-concentration source and drain doping regions including first low-concentration source and drain doping regions disposed in a gate-adjacent region adjacent to the gate and second low-concentration source and drain doping regions disposed in a gate-distant region separated from the gate by the gate-adjacent region;
• and
• high-concentration source and drain doping regions having higher doping concentrations than the low-concentration source and drain doping regions, and
• wherein a first length in the second direction of the first low-concentration source and drain doping regions is greater than a second length in the second direction of the second low-concentration source and drain doping regions.